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| STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 , 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESHTM Power MOSFET Features Type STF7NK30Z STP7NK30Z STD7NK30Z VDSS 300 V 300 V 300 V RDS(on) max < 0.9 < 0.9 < 0.9 ID 5A 5A 5A Pw 20 W 50 W 50 W 1 3 3 2 1 2 TO-220FP 3 1 TO-220 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram DPAK Applications Switching application Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products Table 1. Device summary Marking D7NK30Z F7NK30Z P7NK30Z Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STD7NK30Z STF7NK30Z STP7NK30Z March 2009 Rev 5 1/15 www.st.com 15 Electrical ratings STx7NK30Z 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220, DPAK Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 5 3.2 20 50 0.4 2800 4.5 2500 300 30 5 (1) 3.2 (1) 20 (1) Unit TO-220FP V V A A A W W/C V V/ns V PTOT 20 0.16 VESD(G-S) dv/dt (3) VISO Tj Tstg Gate source ESD(HBM-C=100 pF, R=1.5 k) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Operating junction temperature Storage temperature -55 to 150 V 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 5.7 A, di/dt 200 A/s, VDD =80% V(BR)DSS. Table 3. Symbol Absolute maximum ratings Value Parameter TO-220, DPAK TO-220FP 6.25 62.5 300 V V A 2.50 Unit Rthj-case Thermal resistance junction-case Max Rthj-amb Tl Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Table 4. Symbol IAR EAS Absolute maximum ratings Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Value 5 130 Unit A mJ 2/15 STx7NK30Z Electrical characteristics 2 Electrical characteristics (Tcase =25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID =1 mA, VGS = 0 VDS=max rating VDS=max rating @125 C VGS = 20 V VDS = VGS, ID = 50 A VGS = 10 V, ID = 2.5 A 3 3.75 0.80 Min. 300 1 50 10 4.5 0.90 Typ. Max. Unit V A A A V Table 6. Symbol gfs (1) Dynamic Parameter Test conditions Min. Typ. 2.5 380 74 15 30 13 4.5 7.6 Max. Unit S pF pF pF Forward transconductance VDS =15 V, ID = 2.5 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge VDS = 25 V, f = 1MHz, VGS = 0 Ciss Coss Crss Coss eq. (2) Qg Qgs Qgd VGS = 0, VDS = 0 to 240 V VDD = 240 V, ID = 7 A, VGS = 10 V Figure 16 pF nC nC nC 17 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/15 Electrical characteristics STx7NK30Z Table 7. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 150 V, ID = 3.5 A, RG = 4.7 , VGS = 10 V Figure 15 VDD = 240 V, ID = 7 A, RG = 4.7 , VGS = 10 V Figure 15 Min. Typ. 11 25 20 10 8.5 8.5 20 Max. Unit ns ns ns ns ns ns ns Table 8. Symbol ISD ISDM (1) Source Drain Diode Parameter Source-drain current Source-drain current (pulsed) Forward On voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, VGS = 0 ISD = 7 A, di/dt = 100 A/s VDD = 40 V, Tj = 150 C Figure 20 154 716 9.3 Test conditions Min. Typ. Max. 5 20 1.6 Unit A A V ns nC A VSD (2) trr Qrr IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs= 1mA (open drain) Min. 30 Typ. Max. Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components 4/15 STx7NK30Z Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 5/15 Electrical characteristics Figure 8. Static drain source on resistance Figure 9. STx7NK30Z Normalized BVDSS vs temperature Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 6/15 STx7NK30Z Figure 14. Source-drain diode forward characteristics Electrical characteristics 7/15 Test circuits STx7NK30Z 3 Test circuits Figure 16. Gate charge test circuit VDD 12V 2200 Figure 15. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS VD Figure 20. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 8/15 STx7NK30Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 9/15 Package mechanical data STx7NK30Z TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 10/15 STx7NK30Z Package mechanical data TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J 11/15 Package mechanical data STx7NK30Z TO-252 (DPAK) mechanical data DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4.70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 typ max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 0068772_G 12/15 STx7NK30Z Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 13/15 Revision history STx7NK30Z 6 Revision history Table 10. Date 10-May-2005 05-Sep-2005 04-Jan-2006 22-Mar-2006 05-Mar-2009 Revision history Revision 1 2 3 4 5 New stylesheet Inserted Ecopack indication Some values changed on table 8. Inserted DPAK Section 4: Package mechanical data has been updated Changes 14/15 STx7NK30Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15 |
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